Electrode?Induced Self?Healed Monolayer MoS ₂ for High Performance Transistors and Phototransistors

Contact engineering for monolayered transition metal dichalcogenides (TMDCs) is considered to be of fundamental challenge realizing high-performance TMDCs-based (opto) electronic devices. Here, an innovative concept established a device configuration with metallic copper monosulfide (CuS) electrodes that induces sulfur vacancy healing in the monolayer molybdenum disulfide (MoS2) channel. Excess adatoms from CuS are donated heal defects MoS2 surprisingly improve overall performance its The electrode-induced self-healing mechanism demonstrated and analyzed systematically using various spectroscopic analyses, density functional theory (DFT) calculations, electrical measurements. Without any passivation layers, self-healed (photo)transistor contact show outstanding room temperature field effect mobility 97.6 cm2 (Vs)?1, On/Off ratio > 108, low subthreshold swing 120 mV per decade, high photoresponsivity 1 × 104 A W?1, detectivity 1013 jones, which best among back-gated transistors employ 1L MoS2. Using ultrathin flexible 2D MoS2, mechanically photosensor also demonstrated, shows excellent durability under mechanical strain. These findings demonstrate promising strategy TMDCs or other material development devices including self-healable sulfide electrodes.